Improved material properties of amorphous silicon from silane by fluorine implantation: Application to thin‐film transistors

In this paper it is reported for the first time that the material properties of hydrogenated amorphous‐silicon films deposited from a pure silane plasma can be improved by a low‐dose fluorine implantation. It is shown that the field‐effect density of states is reduced after implantation and appropriate annealing. The implanted material shows a better photostability as well as a better resistance against prolonged electric field application and against exposure to temperatures above deposition temperature.